English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Ta), 191A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 1.9mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 150 nC @ 11.5 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 7.5 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM60NB380CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 11A ITO220S |
|
R6008FNJTLROHM Semiconductor |
MOSFET N-CH 600V 8A LPTS |
|
STB170NF04STMicroelectronics |
MOSFET N-CH 40V 80A D2PAK |
|
BSC079N10NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 13.4A 8TDSON |
|
FDMC8015LRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 7 |
|
AOWF412Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 7.8A/30A |
|
IRFB4137PBFIR (Infineon Technologies) |
MOSFET N-CH 300V 38A TO220 |
|
IPS050N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF6623TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A DIRECTFET |
|
SQM50028EM_GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO263-7 |
|
NVMFS5C670NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |
|
IRFU420PBFVishay / Siliconix |
MOSFET N-CH 500V 2.4A TO251AA |
|
FQA7N80Rochester Electronics |
MOSFET N-CH 800V 7.2A TO3P |
