CRYSTAL 48.0000MHZ 16PF SMD
MOSFET P-CHANNEL 60V 3.5A 8SOP
DIODE GEN PURP 100V 2.4A TO277A
B302 10X14 BLK/RED/WHT DANGER FL
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 3.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 155mOhm @ 3.5A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 540 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 3W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPA60R125P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO220-FP |
|
IPI045N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO262-3 |
|
FDP7N50Rochester Electronics |
MOSFET N-CH 500V 7A TO220-3 |
|
RV1C002UNT2CLROHM Semiconductor |
MOSFET N-CH 20V 150MA VML0806 |
|
CEDM8004 TR PBFREECentral Semiconductor |
MOSFET P-CH 30V 450MA SOT883VL |
|
DMG2301L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 3A SOT23 |
|
SI6423DQ-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 8.2A 8TSSOP |
|
PMV60EN,215Rochester Electronics |
MOSFET N-CH 30V 4.7A TO236AB |
|
SQJA94EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 46A PPAK SO-8 |
|
IXTH6N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO247 |
|
HUF75945P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW60R037P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 76A TO247-3 |
|
SQJ457EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 36A PPAK SO-8 |