English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 580mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 300 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 9670 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 545W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | ISOTOP® |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMT6009LCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 37.2A TO220AB |
|
FQU2N50BTU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 1.6A IPAK |
|
IXTA80N10TWickmann / Littelfuse |
MOSFET N-CH 100V 80A TO263 |
|
IPD088N06N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-3 |
|
STFI20NM65NSTMicroelectronics |
MOSFET N-CH 650V 15A I2PAKFP |
|
TSM80N1R2CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 5.5A ITO220AB |
|
BF2040RE6814Rochester Electronics |
RF N-CHANNEL MOSFET |
|
AUIRFZ44NSRochester Electronics |
MOSFET N-CH 55V 49A TO220AB |
|
TPS1100PWRRochester Electronics |
MOSFET P-CH 15V 1.27A 8TSSOP |
|
SI2336DS-T1-BE3Vishay / Siliconix |
MOSFET N-CH 30V 4.3A/5.2A SOT23 |
|
EKI04036Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 80A TO220-3 |
|
SIRA96DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK SO-8 |
|
DMTH4004SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO252 |
