English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.2mOhm @ 90A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 68.6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4305 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.9W (Ta), 180W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252-3 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHA30N60AEL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 28A TO220 |
|
SPD02N50C3BTMA1Rochester Electronics |
MOSFET N-CH 500V 1.8A TO252 |
|
BUK7E4R0-80E,127Rochester Electronics |
MOSFET N-CH 80V 120A I2PAK |
|
FDMS86101DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 14.5A DLCOOL56 |
|
RLP03N06CLERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJA84EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 46A PPAK SO-8 |
|
TK11A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 11.1A TO220SIS |
|
IPD90N10S406ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
|
MGSF3455XT1Rochester Electronics |
P-CHANNEL MOSFET |
|
MMFTP84Diotec Semiconductor |
MOSFET P-CH 60V 130MA SOT23-3 |
|
SSM3J374R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 4A SOT23F |
|
NTLJS3113PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.5A 6WDFN |
|
SIS468DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK1212-8 |
