English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVIII-H |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8.2mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 500µA |
| 栅极电荷 (qg) (max) @ vgs: | 49 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3000 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220SIS |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GA20JT12-263GeneSiC Semiconductor |
TRANS SJT 1200V 45A D2PAK |
|
IPP230N06L3GXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT24M120B2Roving Networks / Microchip Technology |
MOSFET N-CH 1200V 24A T-MAX |
|
IRFD123PBFVishay / Siliconix |
MOSFET N-CH 100V 1.3A 4DIP |
|
DMN3018SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 8.5A PWRDI3333-8 |
|
SIB441EDK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 9A PPAK SC75-6 |
|
NTD4809NH-1GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A IPAK |
|
IPS80R1K4P7Rochester Electronics |
IPS80R1K4 - 800V COOLMOS N-CHANN |
|
IPA50R399CPXKSA1Rochester Electronics |
MOSFET N-CH 500V 9A TO220-FP |
|
DMP2021UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 9A 6UDFN |
|
CSD17559Q5Rochester Electronics |
CSD17559Q5 30V, N CHANNEL NEXFET |
|
FDB86360-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 110A D2PAK |
|
AON2411Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 20A 8DFN |
