English
简体中文
CAP TANT 33UF 20% 10V 1206
MOSFET N-CH 800V 6A PWRFLAT VHV
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ K5 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 660mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 427 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 42W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerFlat™ (5x6) VHV |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STW56N65DM2STMicroelectronics |
MOSFET N-CH 650V 48A TO247 |
|
PSMN4R4-80BS,118Nexperia |
MOSFET N-CH 80V 100A D2PAK |
|
SFP9520Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDS6688SRochester Electronics |
MOSFET N-CH 30V 16A 8SOIC |
|
IXFA34N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 34A TO263AA |
|
STP10LN80K5STMicroelectronics |
MOSFET N-CH 800V 8A TO220 |
|
IPB120N10S403ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A D2PAK |
|
2N7002H-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 170MA SOT23 |
|
MMBF170Q-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 500MA SOT23-3 |
|
5LP01C-TB-ERochester Electronics |
MOSFET P-CH 50V 70MA 3CP |
|
RQ3E070BNTBROHM Semiconductor |
MOSFET N-CH 30V 7A 8HSMT |
|
ZXM61N03FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 1.4A SOT23-3 |
|
FDMC86184Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A 8PQFN |