类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR2307ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |
|
IXFN48N60PWickmann / Littelfuse |
MOSFET N-CH 600V 40A SOT227B |
|
SI2301BDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.2A SOT23-3 |
|
IRFZ24SPBFVishay / Siliconix |
MOSFET N-CH 60V 17A TO263 |
|
FDMS86369-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 65A POWER56 |
|
IXTX90N25L2Wickmann / Littelfuse |
MOSFET N-CH 250V 90A PLUS247-3 |
|
SCT50N120STMicroelectronics |
SICFET N-CH 1200V 65A HIP247 |
|
CSD13302WTexas Instruments |
MOSFET N-CH 12V 1.6A 4DSBGA |
|
STP11NM60FDFPSTMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
STF18N60DM2STMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
|
IRFB42N20DPBFRochester Electronics |
CHANNEL |
|
IRFS4310ZPBFRochester Electronics |
MOSFET N-CH 100V 120A D2PAK |
|
FDS9400ASanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.4A 8SOIC |