English
简体中文
MOSFET P-CH 20V 3.1A SOT23-3
NANOCRYSTALLINE COMMON MODE CHOK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 112mOhm @ 2.8A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 405 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 860mW (Ta), 1.6W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF840ASTRLPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
STD9N65M2STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
FDC5614PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A SUPERSOT6 |
|
TN2106N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 300MA TO92-3 |
|
SPP15N65C3XKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
CSD18533KCSTexas Instruments |
MOSFET N-CH 60V 72A/100A TO220-3 |
|
DMTH6004SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO252 |
|
IPW60R031CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 63A TO247-3 |
|
DMP3125L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 2.5A SOT23 T&R |
|
HUFA76429P3Rochester Electronics |
MOSFET N-CH 60V 47A TO220-3 |
|
IXTA06N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 600MA TO263 |
|
STL130N8F7STMicroelectronics |
MOSFET N-CH 80V 130A POWERFLAT |
|
DMP3028LFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 6.8A 6UDFN |