类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 16.5mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 7.6 nC @ 5 V |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | 780 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-VSOF |
包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDG326PRochester Electronics |
MOSFET P-CH 20V 1.5A SC88 |
|
PSMNR60-25YLHXNexperia |
MOSFET N-CH 25V 300A LFPAK56 |
|
UPA650TT-E1-ARochester Electronics |
MOSFET P-CH 12V 5A 6WSOF |
|
ZXMP6A13GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 1.7A SOT223 |
|
FQI32N20CTURochester Electronics |
MOSFET N-CH 200V 28A I2PAK |
|
FDMS0308CSRochester Electronics |
MOSFET N-CH 30V 22A 8PQFN |
|
IXFP5N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 5A TO220AB |
|
SIHH14N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 15A PPAK 8 X 8 |
|
AUIRFP2907Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IXTN102N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 76A SOT227 |
|
PSMN5R6-100YSFXNexperia |
MOSFET N-CH 100V 158A LFPAK56 |
|
SPP24N60CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFS4010TRRPBFRochester Electronics |
HEXFET POWER MOSFET |