English
简体中文
FIXED IND 47UH 1.4A 150 MOHM SMD
MOSFET N-CH 80V 100A TO220
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ F6 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5955 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 176W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLML6344TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 5A MICRO3/SOT23 |
|
IPAW60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220 |
|
FDS6676Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TK6A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 5.5A TO220SIS |
|
IPI110N20N3GAKSA1Rochester Electronics |
MOSFET N-CH 200V 88A TO262-3 |
|
SSM3K2615R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 2A SOT23F |
|
IXFX21N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 21A PLUS247-3 |
|
NP36N055HLE-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS9412Rochester Electronics |
MOSFET N-CH 30V 7.9A 8SOIC |
|
STD7N65M2STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
IRFH4234TRPBFRochester Electronics |
MOSFET N-CH 25V 22A PQFN |
|
IPU95R2K0P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 4A TO251-3 |
|
IPAW60R360P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |