English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.6mOhm @ 30A |
| vgs(th) (最大值) @ id: | 2.1V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.011 pF @ 13 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.5W (Ta), 27W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPU95R2K0P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 4A TO251-3 |
|
IPAW60R360P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |
|
AOD423Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/70A TO252 |
|
STD60NF55LT4STMicroelectronics |
MOSFET N-CH 55V 60A DPAK |
|
NTP5404NRGRochester Electronics |
MOSFET N-CH 40V 24A/167A TO220AB |
|
AUIRFSL8409Rochester Electronics |
MOSFET N-CH 40V 195A TO262 |
|
NTMS4800NR2GRochester Electronics |
MOSFET N-CH 30V 4.9A 8SOIC |
|
SQD50034EL_GE3Vishay / Siliconix |
MOSFET N-CH 60V 100A TO252AA |
|
PSMN1R5-40PS,127Nexperia |
MOSFET N-CH 40V 120A TO220AB |
|
IPW65R190C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO247-3 |
|
BUK7675-100A,118Rochester Electronics |
PFET, 23A I(D), 100V, 0.075OHM, |
|
FDPF7N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.5A TO220F |
|
FCH170N60Rochester Electronics |
MOSFET N-CH 600V 22A TO247-3 |
