类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 5.2mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 39.4 nC @ 5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 6319 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 195W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK56, Power-SO8 |
包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTR4170NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V SOT23-3 |
|
HUF75321D3Rochester Electronics |
MOSFET N-CH 55V 20A IPAK |
|
STP8N80K5STMicroelectronics |
MOSFET N CH 800V 6A TO220 |
|
DMTH6009LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 14.2A/59A TO252 |
|
IRFR3411PBFRochester Electronics |
MOSFET N-CH 100V 32A DPAK |
|
IXTH1N170DHVWickmann / Littelfuse |
MOSFET N-CH 1700V 1A TO247HV |
|
APT8024LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 31A TO264 |
|
IRF710SPBFVishay / Siliconix |
MOSFET N-CH 400V 2A D2PAK |
|
2SK1461Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI3443BDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.6A 6TSOP |
|
TPH3202LDTransphorm |
GANFET N-CH 600V 9A 4PQFN |
|
IXTP90N15TWickmann / Littelfuse |
MOSFET N-CH 150V 90A TO220AB |
|
IPU80R4K5P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.5A TO251-3 |