English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 75mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1597 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFH7084TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8PQFN |
|
TK8A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 8A TO220SIS |
|
IPN70R1K2P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4.5A SOT223 |
|
CSD18541F5TTexas Instruments |
MOSFET N-CH 60V 2.2A 3PICOSTAR |
|
SQ2398ES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 1.6A SOT23-3 |
|
DMPH6050SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V PWRDI3333 |
|
PMV27UPERNexperia |
MOSFET P-CH 20V 4.5A TO236AB |
|
DMP3026SFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.4A 6UDFN |
|
DMNH6008SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 16.5A PWRDI5060 |
|
NTMS4705NR2GRochester Electronics |
MOSFET N-CH 30V 7.4A 8SOIC |
|
FQU20N06LTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17.2A IPAK |
|
IRFZ44VZSPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 57A D2PAK |
|
IPD122N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 59A TO252-3 |
