类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTD4863NT4GRochester Electronics |
MOSFET N-CH 25V 9.2A/49A DPAK |
|
STD40NF03LT4STMicroelectronics |
MOSFET N-CH 30V 40A DPAK |
|
IPP60R120P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 26A TO220-3 |
|
NVMFS5C430NWFT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
FDPF17N60NTRochester Electronics |
MOSFET N-CH 600V 17A TO220F |
|
BSC205N10LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN30H4D0LFDE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 300V 550MA 6UDFN |
|
IXTH26P20PWickmann / Littelfuse |
MOSFET P-CH 200V 26A TO247 |
|
FDS4072N7Rochester Electronics |
MOSFET N-CH 40V 12.4A 8SO |
|
NDT452APSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 5A SOT-223-4 |
|
SIRC18DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
NVMYS010N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/38A 4LFPAK |
|
BSS314PEH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 1.5A SOT23-3 |