English
简体中文
RELAY GEN PURPOSE DPDT 10MA 6VDC
N-CHANNEL POWER MOSFET
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD4863NT4GRochester Electronics |
MOSFET N-CH 25V 9.2A/49A DPAK |
|
STD40NF03LT4STMicroelectronics |
MOSFET N-CH 30V 40A DPAK |
|
IPP60R120P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 26A TO220-3 |
|
NVMFS5C430NWFT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
FDPF17N60NTRochester Electronics |
MOSFET N-CH 600V 17A TO220F |
|
BSC205N10LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN30H4D0LFDE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 300V 550MA 6UDFN |
|
IXTH26P20PWickmann / Littelfuse |
MOSFET P-CH 200V 26A TO247 |
|
FDS4072N7Rochester Electronics |
MOSFET N-CH 40V 12.4A 8SO |
|
NDT452APSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 5A SOT-223-4 |
|
SIRC18DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
NVMYS010N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/38A 4LFPAK |
|
BSS314PEH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 1.5A SOT23-3 |