English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 44A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 108 nC @ 20 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.7 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 155W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NDB7052LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SFT1440-ERochester Electronics |
MOSFET N-CH 600V 1.5A TP |
|
XPH6R30ANB,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 45A 8SOP |
|
NTP125N02RGRochester Electronics |
MOSFET N-CH 24V 15.9A TO220AB |
|
RTQ040P02TRROHM Semiconductor |
MOSFET P-CH 20V 4A TSMT6 |
|
DI012N60D1Diotec Semiconductor |
MOSFET N-CH 600V 12A TO252-3 |
|
NVMFS6H824NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 19A/103A 5DFN |
|
TSM60N900CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4.5A ITO220AB |
|
AOT470Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 10A/100A TO220 |
|
ATP404-H-TL-HRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
NTE454NTE Electronics, Inc. |
MOSFET-DUAL GATE N-CH |
|
UPA1809GR-9JG-E2-ARochester Electronics |
MOSFET N-CH 30V 8A 8TSSOP |
|
NVD5806NT4GRochester Electronics |
40V, 33A, SINGLE N-CHANNEL |
