类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | SiCFET (Silicon Carbide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 31A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 18V |
rds on (max) @ id, vgs: | 104mOhm @ 10A, 18V |
vgs(th) (最大值) @ id: | 5.6V @ 5mA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 18 V |
vgs (最大值): | +22V, -4V |
输入电容 (ciss) (max) @ vds: | 785 pF @ 800 V |
场效应管特征: | - |
功耗(最大值): | 165W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247N |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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