SICFET N-CH 1200V 31A TO247N
INDUCTIVE SEN 20MM PNP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | SiCFET (Silicon Carbide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 31A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 18V |
rds on (max) @ id, vgs: | 104mOhm @ 10A, 18V |
vgs(th) (最大值) @ id: | 5.6V @ 5mA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 18 V |
vgs (最大值): | +22V, -4V |
输入电容 (ciss) (max) @ vds: | 785 pF @ 800 V |
场效应管特征: | - |
功耗(最大值): | 165W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247N |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK98150-55/CUFRochester Electronics |
MOSFET N-CH 55V 5.5A SOT223 |
|
GKI04031Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 17A 8DFN |
|
RAL045P01TCRROHM Semiconductor |
MOSFET P-CH 12V 4.5A TUMT6 |
|
BUK9Y14-40B,115Nexperia |
MOSFET N-CH 40V 56A LFPAK56 |
|
FDN338PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.6A SUPERSOT3 |
|
SUM110N04-2M1P-E3Vishay / Siliconix |
MOSFET N-CH 40V 29A/110A TO263 |
|
IPB60R125C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A D2PAK |
|
RM3415Rectron USA |
MOSFET P-CHANNEL 20V 4A SOT23 |
|
FQPF6N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 6A TO220F |
|
IRFZ34NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 29A TO220AB |
|
SIE818DF-T1-E3Vishay / Siliconix |
MOSFET N-CH 75V 60A 10POLARPAK |
|
STD30NF03LT4STMicroelectronics |
MOSFET N-CH 30V 30A DPAK |
|
BUK753R8-80E,127Rochester Electronics |
TRANSISTOR >30MHZ |