English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSC070N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TDSON |
|
XP264N0301TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 60V 300MA SOT23 |
|
IPB65R225C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-3 |
|
IRF2204PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 210A TO220AB |
|
R6030ENZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 30A TO247 |
|
IPS075N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMV30UN2RNexperia |
MOSFET N-CH 20V 4.2A TO236AB |
|
HUFA75307D3STRochester Electronics |
MOSFET N-CH 55V 15A TO252AA |
|
PSMN1R8-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
SSM3J15CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 100MA CST3 |
|
SI7309DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8A PPAK1212-8 |
|
IXTY02N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 200MA TO252 |
|
IPU50R3K0CEBKMA1Rochester Electronics |
MOSFET N-CH 500V 1.7A TO251-3 |
