English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ CE |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 13V |
| rds on (max) @ id, vgs: | 3Ohm @ 400mA, 13V |
| vgs(th) (最大值) @ id: | 3.5V @ 30µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 84 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 18W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO251-3 |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VN0550N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
|
MMDFS2P102R2Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDD068AN03LRochester Electronics |
MOSFET N-CH 30V 17A/35A TO252AA |
|
TPN11006NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 17A 8TSON |
|
PMV32UP,215Nexperia |
MOSFET P-CH 20V 4A TO236AB |
|
PMN55LN,135Rochester Electronics |
MOSFET N-CH 20V 4.1A 6TSOP |
|
IPI65R099C6XKSA1Rochester Electronics |
COOLMOS 650V N-CHANNEL |
|
RD3P175SNTL1ROHM Semiconductor |
MOSFET N-CH 100V 17.5A TO252 |
|
SFT1341-TL-WRochester Electronics |
SFT1341-TL-W |
|
TK20S06K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 20A DPAK |
|
PSMN4R3-100PS,127Nexperia |
MOSFET N-CH 100V 120A TO220AB |
|
IPP80N06S2-07AKSA4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRFR8405TRLRochester Electronics |
MOSFET N-CH 40V 100A DPAK |
