类型 | 描述 |
---|---|
系列: | U-MOSIV |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 29mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 3V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 780 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 38W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK+ |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN4R3-100PS,127Nexperia |
MOSFET N-CH 100V 120A TO220AB |
|
IPP80N06S2-07AKSA4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRFR8405TRLRochester Electronics |
MOSFET N-CH 40V 100A DPAK |
|
DMT4001LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A PWRDI5060-8 |
|
IPA60R385CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220-FP |
|
DMTH6004LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 22A PWRDI5060 |
|
BSC889N03LSGATMA1Rochester Electronics |
MOSFET N-CH 30V 13A/45A TDSON |
|
IRFHM9331TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 11A/24A PQFN |
|
IXTX1R4N450HVWickmann / Littelfuse |
MOSFET N-CH 4500V 1.4A TO247PLUS |
|
TSM280NB06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 7A/28A 8PDFN |
|
FCP067N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 44A TO220 |
|
R6515ENJTLROHM Semiconductor |
MOSFET N-CH 650V 15A LPTS |
|
APT39M60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 42A ISOTOP |