类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 22A (Ta), 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.8mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 96.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4515 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2.6W (Ta), 138W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI5060-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC889N03LSGATMA1Rochester Electronics |
MOSFET N-CH 30V 13A/45A TDSON |
|
IRFHM9331TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 11A/24A PQFN |
|
IXTX1R4N450HVWickmann / Littelfuse |
MOSFET N-CH 4500V 1.4A TO247PLUS |
|
TSM280NB06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 7A/28A 8PDFN |
|
FCP067N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 44A TO220 |
|
R6515ENJTLROHM Semiconductor |
MOSFET N-CH 650V 15A LPTS |
|
APT39M60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 42A ISOTOP |
|
IXTY1R6N50D2-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 1.6A TO252AA |
|
IPP60R600C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 7.3A TO220-3 |
|
NVJS4405NT1GRochester Electronics |
MOSFET N-CH 25V 1A SC88 |
|
IPD65R380C6BTMA1Rochester Electronics |
MOSFET |
|
FQB27P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27A D2PAK |
|
IPW50R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |