MOSFET N-CH 60V 30A TO220-3
IND DELAY LINE 3.4NS 1 OHM SMD
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 28mOhm @ 18A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 95 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 48W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STD4N52K3STMicroelectronics |
MOSFET N-CH 525V 2.5A DPAK |
|
2SK1403A-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS5A160PLZT3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 15A/100A 5DFN |
|
RDD022N60TLROHM Semiconductor |
MOSFET N-CH 600V 2A CPT3 |
|
PSMN4R0-40YS,115Nexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
IXFX32N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 32A PLUS247-3 |
|
FQD2P40TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 400V 1.56A DPAK |
|
IPB80N06S407ATMA2Rochester Electronics |
MOSFET N-CH 60V 80A TO263-3-2 |
|
MPF4856RLRARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
APT22F120B2Roving Networks / Microchip Technology |
MOSFET N-CH 1200V 23A T-MAX |
|
DMN2026UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.2A TSOT-26 |
|
NTD24N06-1GRochester Electronics |
MOSFET N-CH 60V 24A IPAK |
|
PMN70XPEAXRochester Electronics |
MOSFET P-CH 20V 3.2A 6TSOP |