类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 100mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.2V, 4.5V |
rds on (max) @ id, vgs: | 3.8Ohm @ 100mA, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 15 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 150mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | EMT3F (SOT-416FL) |
包/箱: | SC-89, SOT-490 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI2303-TPMicro Commercial Components (MCC) |
MOSFET P-CH 30V 3A SOT23 |
|
IPDD60R145CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 24A HDSOP-10 |
|
FDB8870-F085Rochester Electronics |
MOSFET N-CH 30V 23A/160A D2PAK |
|
NTD4857NAT4GRochester Electronics |
MOSFET N-CH 25V 12A/78A DPAK |
|
SI2312CDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 6A SOT23-3 |
|
PMPB15XN,115Nexperia |
MOSFET N-CH 20V 7.3A DFN2020MD-6 |
|
SIHLZ34S-GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A D2PAK |
|
IPD50N06S409ATMA1Rochester Electronics |
MOSFET N-CH 60V 50A TO252-3 |
|
SQD97N06-6M3L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 97A TO252AA |
|
IXFK48N50QWickmann / Littelfuse |
MOSFET N-CH 500V 48A TO264AA |
|
TK8A60DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 7.5A TO220SIS |
|
SSM3K15ACT(TPL3)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA CST3 |
|
IXTH460P2Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO247 |