N-CHANNEL POWER MOSFET
ARMB "H" 1KW LPG THRD
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVHL080N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 44A TO247-3 |
|
IRFR020TRPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
MCU80N03-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 80A DPAK |
|
IRFBF20PBFVishay / Siliconix |
MOSFET N-CH 900V 1.7A TO220AB |
|
FDMS86200Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 9.6A/35A 8PQFN |
|
TPH2R003PL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100A 8SOP |
|
DI036N20PQDiotec Semiconductor |
MOSFET N-CH 200V 36A 8QFN |
|
APT26M100JCU2Roving Networks / Microchip Technology |
MOSFET N-CH 1000V 26A SOT227 |
|
IXFH12N100FWickmann / Littelfuse |
MOSFET N-CH 1000V 12A TO247AD |
|
IRF2805STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 135A D2PAK |
|
BSC0402NSATMA1IR (Infineon Technologies) |
150V, N-CH MOSFET, LOGIC LEVEL, |
|
IRLI540GVishay / Siliconix |
MOSFET N-CH 100V 17A TO220-3 |
|
SPB80N03S2L-05Rochester Electronics |
MOSFET N-CH 30V 80A TO263-3 |