English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3Ohm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 331 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 57W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN013-80YS,115Nexperia |
MOSFET N-CH 80V 60A LFPAK56 |
|
IRFS240BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CSD18532NQ5BTTexas Instruments |
MOSFET N-CH 60V 100A 8VSON |
|
SPP80N06S2L-11Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3 |
|
BUK7535-55A,127Rochester Electronics |
PFET, 35A I(D), 55V, 0.035OHM, 1 |
|
IPB049N06L3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RQ5H030TNTLROHM Semiconductor |
MOSFET N-CH 45V 3A TSMT3 |
|
SIRA18DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 33A PPAK SO-8 |
|
RM70P30DFRectron USA |
MOSFET P-CHANNEL 30V 70A 8DFN |
|
2N7002Q-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 170MA SOT23 |
|
BSF450NE7NH3XUMA1Rochester Electronics |
MOSFET N-CH 75V 5A/15A 2WDSON |
|
HUF75332S3STRochester Electronics |
MOSFET N-CH 55V 52A D2PAK |
|
ISL9N304AS3STRochester Electronics |
N-CHANNEL POWER MOSFET |
