类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 7.5mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21.5 nC @ 10 V |
vgs (最大值): | +20V, -16V |
输入电容 (ciss) (max) @ vds: | 1000 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 3.3W (Ta), 14.7W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RM70P30DFRectron USA |
MOSFET P-CHANNEL 30V 70A 8DFN |
|
2N7002Q-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 170MA SOT23 |
|
BSF450NE7NH3XUMA1Rochester Electronics |
MOSFET N-CH 75V 5A/15A 2WDSON |
|
HUF75332S3STRochester Electronics |
MOSFET N-CH 55V 52A D2PAK |
|
ISL9N304AS3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTY08N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 800MA TO252 |
|
IRF540ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO220AB |
|
3LP03M-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
PHP20NQ20T,127Nexperia |
MOSFET N-CH 200V 20A TO220AB |
|
TK10A60W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220 |
|
AUIRLR3114ZTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
RCD041N25TLROHM Semiconductor |
MOSFET N-CH 250V 4A CPT3 |
|
DMP26M7UFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 18A PWRDI3333 |