English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 130mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 65 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2470 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK10A60W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220 |
|
AUIRLR3114ZTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
RCD041N25TLROHM Semiconductor |
MOSFET N-CH 250V 4A CPT3 |
|
DMP26M7UFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 18A PWRDI3333 |
|
SIHP17N80E-BE3Vishay / Siliconix |
MOSFET N-CH 800V 15A TO220AB |
|
STD5NK40Z-1STMicroelectronics |
MOSFET N-CH 400V 3A IPAK |
|
SQJ403BEEP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 30A PPAK SO-8 |
|
BUK7E8R3-40E,127Nexperia |
MOSFET N-CH 40V 75A I2PAK |
|
IPI65R280C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO262-3 |
|
SSU1N60BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD70R600CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 10.5A TO252-3 |
|
IRFS4620PBFRochester Electronics |
IRFS4620 - 12V-300V N-CHANNEL PO |
|
AOB42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 37A TO263 |
