English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 164 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 68W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7E8R3-40E,127Nexperia |
MOSFET N-CH 40V 75A I2PAK |
|
IPI65R280C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO262-3 |
|
SSU1N60BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD70R600CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 10.5A TO252-3 |
|
IRFS4620PBFRochester Electronics |
IRFS4620 - 12V-300V N-CHANNEL PO |
|
AOB42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 37A TO263 |
|
AUIRF7738L2TRRochester Electronics |
MOSFET N-CH 40V 35A/130A DIRECT |
|
DMP2010UFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 12.7A PWRDI3333 |
|
BUK7507-55B,127Rochester Electronics |
PFET, 119A I(D), 55V, 0.0071OHM, |
|
AONR34332CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 48A/50A 8DFN |
|
IPP50CN10NGXKSA1Rochester Electronics |
MOSFET N-CH 100V 20A TO220-3 |
|
IXTA96P085TWickmann / Littelfuse |
MOSFET P-CH 85V 96A TO263 |
|
SQ3426EV-T1_BE3Vishay / Siliconix |
MOSFET N-CHANNEL 60V 7A 6TSOP |
