类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RSJ400N06FRATLROHM Semiconductor |
MOSFET N-CH 60V 40A LPTS |
|
IPD530N15N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A TO252-3 |
|
NTMFS4835NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/130A 5DFN |
|
IPB180N04S400ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
SISS65DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 25.9A/94A PPAK |
|
2SK4080-ZK-E1-AYRochester Electronics |
MOSFET N-CH 30V 48A TO252 |
|
IPT111N20NFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 96A 8HSOF |
|
FDB035N10ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 120A D2PAK |
|
2SK1620L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
STW68N60M6STMicroelectronics |
MOSFET N-CH 600V TO247-3 |
|
TK7A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6.8A TO220SIS |
|
IRFF9122Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RTF015P02TLROHM Semiconductor |
MOSFET P-CH 20V 1.5A TUMT3 |