English
简体中文
CRYSTAL 25.0000MHZ 10PF SMD
CRYSTAL 32.0000MHZ 8PF SMD
MOSFET N-CH 60V 40A LPTS
FUSE GLASS 125MA 250VAC 5X20MM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 16mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 52 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2400 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Ta) |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | LPTS |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD530N15N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A TO252-3 |
|
NTMFS4835NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/130A 5DFN |
|
IPB180N04S400ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
SISS65DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 25.9A/94A PPAK |
|
2SK4080-ZK-E1-AYRochester Electronics |
MOSFET N-CH 30V 48A TO252 |
|
IPT111N20NFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 96A 8HSOF |
|
FDB035N10ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 120A D2PAK |
|
2SK1620L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
STW68N60M6STMicroelectronics |
MOSFET N-CH 600V TO247-3 |
|
TK7A65W,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6.8A TO220SIS |
|
IRFF9122Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RTF015P02TLROHM Semiconductor |
MOSFET P-CH 20V 1.5A TUMT3 |
|
FDMS86263PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 4.4A/22A 8PQFN |