English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UniFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 440mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 63 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3095 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 38.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPW4R008NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 116A 8DSOP |
|
NTHLD040N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 65A TO247 |
|
RM110N85T2Rectron USA |
MOSFET N-CH 85V 110A TO220-3 |
|
IXFR48N60Q3Wickmann / Littelfuse |
MOSFET N-CH 600V 32A ISOPLUS247 |
|
DMN26D0UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 230MA SOT523 |
|
SPU21N05LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTP180N10TWickmann / Littelfuse |
MOSFET N-CH 100V 180A TO220AB |
|
VN2410L-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 190MA TO92-3 |
|
IRFS3006PBFRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |
|
IRF7493TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 9.3A 8SO |
|
FQI8N60CTURochester Electronics |
MOSFET N-CH 600V 7.5A I2PAK |
|
FDS6679AZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC |
|
FDS6689SRochester Electronics |
MOSFET N-CH 30V 16A 8SOIC |
