FIXED IND 22UH 509MA 750 MOHM
MOSFET N-CH 100V 180A TO220AB
类型 | 描述 |
---|---|
系列: | TrenchMV™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 180A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 6.4mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 151 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 6900 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 480W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VN2410L-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 190MA TO92-3 |
|
IRFS3006PBFRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |
|
IRF7493TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 9.3A 8SO |
|
FQI8N60CTURochester Electronics |
MOSFET N-CH 600V 7.5A I2PAK |
|
FDS6679AZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC |
|
FDS6689SRochester Electronics |
MOSFET N-CH 30V 16A 8SOIC |
|
SI3473CDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 8A 6TSOP |
|
TPC6111(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A VS-6 |
|
STB47N60DM6AGSTMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 600 V |
|
APT60M60JLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 70A ISOTOP |
|
IRF322Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
AUIRF3007Rochester Electronics |
MOSFET N-CH 75V 75A TO220AB |
|
AUIRLR3705ZTRLRochester Electronics |
MOSFET N-CH 55V 42A DPAK |