English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 15mOhm @ 5.6A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 53 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1510 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQI8N60CTURochester Electronics |
MOSFET N-CH 600V 7.5A I2PAK |
|
FDS6679AZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC |
|
FDS6689SRochester Electronics |
MOSFET N-CH 30V 16A 8SOIC |
|
SI3473CDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 8A 6TSOP |
|
TPC6111(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A VS-6 |
|
STB47N60DM6AGSTMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 600 V |
|
APT60M60JLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 70A ISOTOP |
|
IRF322Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
AUIRF3007Rochester Electronics |
MOSFET N-CH 75V 75A TO220AB |
|
AUIRLR3705ZTRLRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
NTMFS4C01NT1GRochester Electronics |
MOSFET N-CH 30V 47A/303A 5DFN |
|
IRFR3708TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
|
RRQ020P03TCRROHM Semiconductor |
MOSFET P-CH 30V 2A TSMT6 |
