类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 47A (Ta), 303A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 0.9mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 139 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 10.144 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 3.2W (Ta), 134W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR3708TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
|
RRQ020P03TCRROHM Semiconductor |
MOSFET P-CH 30V 2A TSMT6 |
|
NTBG160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 19.5A D2PAK |
|
NDT014LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 2.8A SOT223-4 |
|
NVMFS5A160PLZWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 15A/100A 5DFN |
|
FDB3672Rochester Electronics |
MOSFET N-CH 100V 7.2A/44A TO263 |
|
FQI50N06LTURochester Electronics |
MOSFET N-CH 60V 52.4A I2PAK |
|
DMP4011SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V PWRDI5060 |
|
EMH1405-TL-HRochester Electronics |
MOSFET N-CH 30V 8.5A 8EMH |
|
SIHJ240N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A PPAK SO-8 |
|
IRF7607TRPBFRochester Electronics |
IRF7607 - 12V-300V N-CHANNEL POW |
|
EPC2206EPC |
GANFET N-CH 80V 90A DIE |
|
PSMN1R0-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |