类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 200mOhm @ 11A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 61 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 150W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RM12P30S8Rectron USA |
MOSFET P-CHANNEL 30V 12A 8SOP |
|
SUM70040E-GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO263 |
|
SI4164DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30A 8SO |
|
BB504CDS-WS-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
SIHD12N50E-GE3Vishay / Siliconix |
MOSFET N-CH 550V 10.5A DPAK |
|
SIR416DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A PPAK SO-8 |
|
AO4266EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 60V 11A 8SO |
|
STL33N60M2STMicroelectronics |
MOSFET N-CH 600V 22A PWRFLAT HV |
|
CSD25484F4Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
|
TN0606N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 500MA TO92-3 |
|
SQ4435EY-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 15A 8SOIC |
|
SPB21N50C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 560V 21A TO263-3 |
|
2SJ665-DL-1EXRochester Electronics |
MOSFET P-CH 100V 27A TO263-2 |