类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 18mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 58 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2170 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 6.8W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOIC |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SPB21N50C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 560V 21A TO263-3 |
|
2SJ665-DL-1EXRochester Electronics |
MOSFET P-CH 100V 27A TO263-2 |
|
DMP3035SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.5A PWRDI3333-8 |
|
APT28M120LRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 29A TO264 |
|
DMG7N65SJ3Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 650V 5.5A TO251 |
|
IXTP260N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 260A TO220AB |
|
NTD30N02GRochester Electronics |
MOSFET N-CH 24V 30A DPAK |
|
AOSP66920Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 13.5A 8SOIC |
|
IPD50R950CEAUMA1IR (Infineon Technologies) |
CONSUMER |
|
IPP020N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 29A/120A TO220-3 |
|
AON6411Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 47A/85A 8DFN |
|
SQJA00EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 30A PPAK SO-8 |
|
DMN2004TK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 540MA SOT523 |