English
简体中文
HOR. BRACKET - TYPE III, 35A 24V
MOSFET N CH 620V 5.5A I2PAKFP
IC TRANSCEIVER 1/1 8DFN
IC EEPROM 1KBIT SPI 2MHZ 8SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH3™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 620 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 2.8A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 875 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAKFP (TO-281) |
| 包/箱: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQJ211ELP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 100V 33.6A PPAK SO-8 |
|
IPL60R285P7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A 4VSON |
|
STF11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
|
BSL802SNL6327HTSA1Rochester Electronics |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
CPH6350-TL-ERochester Electronics |
MOSFET P-CH 30V 6A 6CPH |
|
IRF840LCVishay / Siliconix |
MOSFET N-CH 500V 8A TO220AB |
|
NVMFS6H848NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 13A/57A 5DFN |
|
STP13NK60ZSTMicroelectronics |
MOSFET N-CH 600V 13A TO220AB |
|
PMV213SN,215Nexperia |
MOSFET N-CH 100V 1.9A TO236AB |
|
DMTH4008LFDFWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 11.6A 6UDFN |
|
2SK3115-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTB27N06LT4Rochester Electronics |
MOSFET N-CH 60V 27A D2PAK |
|
BSC035N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TDSON |