MOSFET N-CH 100V 1.9A TO236AB
CBL ASSY M STR 2.1MM 15' 16AWG
类型 | 描述 |
---|---|
系列: | TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 1.9A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 250mOhm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 7 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 330 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 280mW (Tj) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-236AB |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMTH4008LFDFWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 11.6A 6UDFN |
|
2SK3115-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTB27N06LT4Rochester Electronics |
MOSFET N-CH 60V 27A D2PAK |
|
BSC035N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TDSON |
|
ZXMP10A18GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 2.6A SOT223 |
|
FQH35N40Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMV90ENERNexperia |
MOSFET N-CHANNEL 30V 3A TO236AB |
|
APT66F60LRoving Networks / Microchip Technology |
MOSFET N-CH 600V 70A TO264 |
|
IRFL110TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
|
DMP6110SVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 7.3A TSOT26 |
|
RUF020N02TLROHM Semiconductor |
MOSFET N-CH 20V 2A TUMT3 |
|
DMN10H700S-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 700MA SOT23 |
|
AOI8N25Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 250V 8A TO251A |