English
简体中文
MOSFET N-CH 600V 73A 264 MAX
IGBT 600V 20A 115W TO220
IC SHIFT REGISTER 8BIT 16DIP
SENSOR 100PSI M10-1.0 6G .5-4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 7® |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 73A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 75mOhm @ 36.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 5mA |
| 栅极电荷 (qg) (max) @ vgs: | 195 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 8930 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 893W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | 264 MAX™ [L2] |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF6218STRLPBFRochester Electronics |
MOSFET P-CH 150V 27A D2PAK |
|
BUK9606-40B,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |
|
SI5443DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.6A 1206-8 |
|
FDPF5N50TYDTURochester Electronics |
MOSFET N-CH 500V 5A TO220F |
|
R6004JNXC7GROHM Semiconductor |
MOSFET N-CH 600V 4A TO220FM |
|
IRLR8103VPBF-IRRochester Electronics |
MOSFET N-CH 30V 91A DPAK |
|
IPZ65R019C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 75A TO247-4 |
|
IPD068N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
|
FQP30N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 30A TO220-3 |
|
C3M0065100JWolfspeed - a Cree company |
SICFET N-CH 1000V 35A D2PAK-7 |
|
IPB60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK762R0-40C,118Rochester Electronics |
PFET, 276A I(D), 40V, 0.00375OHM |
|
FDS7064NRochester Electronics |
MOSFET N-CH 30V 16A 8SO |