RES SMD 4.64KOHM 0.02% 1/4W 1206
MOSFET N-CH 30V 91A DPAK
MOSFET N-CH 650V 75A TO247-4
CONN RCPT HSNG MALE 28POS PNL MT
类型 | 描述 |
---|---|
系列: | CoolMOS™ C7 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 19mOhm @ 58.3A, 10V |
vgs(th) (最大值) @ id: | 4V @ 2.92mA |
栅极电荷 (qg) (max) @ vgs: | 215 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 9900 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 446W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO247-4 |
包/箱: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD068N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
|
FQP30N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 30A TO220-3 |
|
C3M0065100JWolfspeed - a Cree company |
SICFET N-CH 1000V 35A D2PAK-7 |
|
IPB60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK762R0-40C,118Rochester Electronics |
PFET, 276A I(D), 40V, 0.00375OHM |
|
FDS7064NRochester Electronics |
MOSFET N-CH 30V 16A 8SO |
|
IPB47N10SL-26Rochester Electronics |
IPB47N10 - 75V-100V N-CHANNEL AU |
|
STL13N65M2STMicroelectronics |
MOSFET N-CH 650V 6.5A POWERFLAT |
|
STF140N6F7STMicroelectronics |
MOSFET N-CH 60V 70A TO220FP |
|
DMTH6004SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO220-3 |
|
AOTF12N30Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 300V 11.5A TO220-3F |
|
IPB80N06S2L11ATMA2Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
TJ10S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 10A DPAK |