类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 49A (Ta), 319A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 0.9mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 139 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 10144 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 3.84W (Ta), 161W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHB21N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263AB |
|
DMN30H4D0L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 300V 250MA SOT23 |
|
STD2NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 1.85A DPAK |
|
IPW60R125P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO247-3 |
|
UJ3C120070K3SUnitedSiC |
SICFET N-CH 1200V 34.5A TO247-3 |
|
IPW60R190C6FKSA1Rochester Electronics |
IPW60R190 - 600V COOLMOS N-CHANN |
|
TPCA8065-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 16A 8SOP |
|
VP0808L-GRoving Networks / Microchip Technology |
MOSFET P-CH 80V 280MA TO92-3 |
|
FDMS8672ASRochester Electronics |
MOSFET N-CH 30V 18A/28A 8PQFN |
|
IXTP08N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO220AB |
|
AOT42S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 37A TO220 |
|
FQD7P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.7A DPAK |
|
RJK03B9DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |