







FUSE BRD MNT 100MA 250VAC RADIAL
MOSFET N-CH 600V 23A TO3P-3L
COPPER PATCH CORD, CAT 6, OFF WH
IC DAC/AUDIO 24BIT 192K 20TSSOP
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 23A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 360mOhm @ 11.5A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 84 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2.2 pF @ 30 V |
| 场效应管特征: | - |
| 功耗(最大值): | 2.5W (Ta), 220W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P-3L |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BUK7Y15-100E115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SJ646-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
SSM3K361R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET NCH 100V 3.5A SOT23F |
|
|
NTMFS4965NFT1GRochester Electronics |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
|
IRFP150NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A TO247AC |
|
|
SQJA46EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
|
PSMN013-100ES,127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
|
TK100S04N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 100A DPAK |
|
|
SPU02N60S5BKMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
|
BUK7510-100B,127Rochester Electronics |
PFET, 75A I(D), 100V, 0.01OHM, 1 |
|
|
IRLR3110ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A DPAK |
|
|
RJK1054DPB-00#J5Renesas Electronics America |
MOSFET N-CH 100V 20A LFPAK |
|
|
FK4B01110L1Panasonic |
MOSFET N-CH 12V 2.3A ALGA004 |