English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVIII-H |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.3mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 500µA |
| 栅极电荷 (qg) (max) @ vgs: | 76 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5490 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 100W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK+ |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPU02N60S5BKMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
BUK7510-100B,127Rochester Electronics |
PFET, 75A I(D), 100V, 0.01OHM, 1 |
|
IRLR3110ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A DPAK |
|
RJK1054DPB-00#J5Renesas Electronics America |
MOSFET N-CH 100V 20A LFPAK |
|
FK4B01110L1Panasonic |
MOSFET N-CH 12V 2.3A ALGA004 |
|
R6020ENZ1C9ROHM Semiconductor |
MOSFET N-CH 600V 20A TO247 |
|
SUD50N06-09L-E3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO252 |
|
HUFA75321D3Rochester Electronics |
MOSFET N-CH 55V 20A IPAK |
|
ITD50N04S4L07ATMA1Rochester Electronics |
ITD50N04 - 20V-40V N-CHANNEL AUT |
|
BSC0403NSATMA1IR (Infineon Technologies) |
150V, N-CH MOSFET, LOGIC LEVEL, |
|
PMV15UNEARNexperia |
MOSFET N-CH 20V 7A TO236AB |
|
SI7112DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 11.3A PPAK1212-8 |
|
SIHP14N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 14A TO220AB |
