类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 105A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 8.3mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 4.9V @ 134µA |
栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 210 pF @ 75 V |
场效应管特征: | - |
功耗(最大值): | 179W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D²PAK (TO-263AB) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APT60M75JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 58A ISOTOP |
|
IXTQ460P2Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO3P |
|
IXTQ96N15PWickmann / Littelfuse |
MOSFET N-CH 150V 96A TO3P |
|
STF35N60DM2STMicroelectronics |
MOSFET N-CH 600V 28A TO220FP |
|
IPD30N06S4L23ATMA1Rochester Electronics |
MOSFET N-CH 60V 30A TO252-3 |
|
IPB120N08S403ATMA1Rochester Electronics |
MOSFET N-CH 80V 120A TO263-3-2 |
|
IPW65R150CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO247-3 |
|
SIHB100N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 30A D2PAK |
|
DMT6007LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 15A PWRDI3333 |
|
SIHFS11N50A-GE3Vishay / Siliconix |
MOSFET N-CH 500V 11A TO263 |
|
STQ1HNK60R-APSTMicroelectronics |
MOSFET N-CH 600V 400MA TO92-3 |
|
TK60P03M1,RQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A DPAK |
|
TSM4NB60CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4A TO251 |