English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 171A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.9mOhm @ 103A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 227 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 10470 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 517W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AC |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP60R1K4C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 3.2A TO220-3 |
|
NTD4909NA-35GRochester Electronics |
MOSFET N-CH 30V 8.8A/41A I-PAK |
|
TK7E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 6.5A TO220 |
|
IXFH20N85XWickmann / Littelfuse |
MOSFET N-CH 850V 20A TO247 |
|
SI7374DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 24A PPAK SO-8 |
|
IRF530NSPBFRochester Electronics |
HEXFET POWER MOSFET |
|
RSS095N05FRATBROHM Semiconductor |
MOSFET N-CH 45V 9.5A 8SOP |
|
STL45N60DM6STMicroelectronics |
MOSFET N-CH 600V 25A PWRFLAT HV |
|
FCP190N65FRochester Electronics |
MOSFET N-CH 650V 20.6A TO220-3 |
|
AO3420Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 6A SOT23-3L |
|
CPH6429-TL-ERochester Electronics |
MOSFET N-CH 60V 2A 6CPH |
|
AUIRFS3206Rochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
STD25NF20STMicroelectronics |
MOSFET N-CH 200V 18A DPAK |
