English
简体中文
CAP CER 2.2UF 10V X7R 0805
MOSFET P-CH 20V 2A S-MINI
DC DC CONVERTER 36V 400W
WIRE DUCT SLOTTED GRAY 6'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVI |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 150mOhm @ 1A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 4.6 nC @ 4.5 V |
| vgs (最大值): | +6V, -8V |
| 输入电容 (ciss) (max) @ vds: | 270 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 600mW (Ta) |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | S-Mini |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R5005CNXROHM Semiconductor |
MOSFET N-CH 500V 5A TO220 |
|
BUK7907-55ATE127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD5810-F085Rochester Electronics |
MOSFET N-CH 60V 7.4A/37A DPAK |
|
PSMN6R5-25YLC,115Nexperia |
MOSFET N-CH 25V 64A LFPAK56 |
|
TPH11006NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 17A 8SOP |
|
SIRA54DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
2N7002WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SC70 |
|
TK10A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220SIS |
|
IPU60R1K5CEBKMA1Rochester Electronics |
MOSFET N-CH 600V 3.1A TO251 |
|
TK5P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 5.4A DPAK |
|
IRFBF20SPBFVishay / Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
|
SIHG17N60D-E3Vishay / Siliconix |
MOSFET N-CH 600V 17A TO247AC |
|
2SK4098FSRochester Electronics |
MOSFET N-CH 600V 6A TO220F-3FS |