类型 | 描述 |
---|---|
系列: | TrenchFET® Gen IV |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.35mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 48 nC @ 4.5 V |
vgs (最大值): | +20V, -16V |
输入电容 (ciss) (max) @ vds: | 5300 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 36.7W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2N7002WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SC70 |
|
TK10A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220SIS |
|
IPU60R1K5CEBKMA1Rochester Electronics |
MOSFET N-CH 600V 3.1A TO251 |
|
TK5P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 5.4A DPAK |
|
IRFBF20SPBFVishay / Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
|
SIHG17N60D-E3Vishay / Siliconix |
MOSFET N-CH 600V 17A TO247AC |
|
2SK4098FSRochester Electronics |
MOSFET N-CH 600V 6A TO220F-3FS |
|
IXFN210N20PWickmann / Littelfuse |
MOSFET N-CH 200V 188A SOT-227B |
|
STF16N50M2STMicroelectronics |
MOSFET N-CH 500V 13A TO220 |
|
CSD17313Q2Texas Instruments |
MOSFET N-CH 30V 5A 6WSON |
|
1HN04CH-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 270MA 3CPH |
|
TJ30S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 30A DPAK |
|
VN2222LLRLRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |