English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 170mOhm @ 4.5A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 275 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Ta), 28.5W (Tj) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRLL024NTR-IRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IPB120N06S402ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO263-3 |
|
RW1C020UNT2RROHM Semiconductor |
MOSFET N-CH 20V 2A 6WEMT |
|
IRFR210TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
FQP19N20LRochester Electronics |
MOSFET N-CH 200V 21A TO220-3 |
|
TSM70N900CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A ITO220AB |
|
IRFR9120Rochester Electronics |
MOSFET P-CH 100V 5.6A DPAK |
|
SI7172DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 25A PPAK SO-8 |
|
FDH210N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V TO247-3 |
|
STL42P4LLF6STMicroelectronics |
MOSFET P-CH 40V 42A POWERFLAT |
|
FQI5N60CTURochester Electronics |
MOSFET N-CH 600V 4.5A I2PAK |
|
IRFS7734TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 183A D2PAK |
|
IRLML2244TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 4.3A SOT23 |
