English
简体中文
MOSFET N-CH 40V 100A I2PAK
MOSFET N-CH 60V PWRDI5060
CONN HEADER VERT 54POS 1.27MM
CONN HDR POST 16POS TIN-LEAD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.1mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 79 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 234W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT50M75B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 57A T-MAX |
|
IPLU300N04S41R1XTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 300A 8HSOF |
|
SIR158DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
RM48N100D3Rectron USA |
MOSFET N-CHANNEL 100V 48A 8DFN |
|
G3R160MT12DGeneSiC Semiconductor |
SIC MOSFET N-CH 22A TO247-3 |
|
NTMFS5C442NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A/140A 5DFN |
|
SI4490DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 200V 2.85A 8SO |
|
IPD80R450P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 11A TO252 |
|
NDFPD1N150CGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1500V 100MA TO220-3 |
|
RS1E350BNTBROHM Semiconductor |
MOSFET N-CH 30V 35A 8HSOP |
|
IRFP350LCPBFVishay / Siliconix |
MOSFET N-CH 400V 16A TO247-3 |
|
MCH6444-TL-WRochester Electronics |
MOSFET N-CH 35V 2.5A MCPH6 |
|
IRFB33N15DPBFRochester Electronics |
MOSFET N-CH 150V 33A TO220AB |