类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 1.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.2V, 4.5V |
rds on (max) @ id, vgs: | 447mOhm @ 1.2A, 4.5V |
vgs(th) (最大值) @ id: | 950mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 2.3 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 116 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 360mW (Ta), 5.68W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN1010D-3 |
包/箱: | 3-XDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STD100NH02LT4STMicroelectronics |
MOSFET N-CH 24V 60A DPAK |
|
NTD4804N-35GRochester Electronics |
MOSFET N-CH 30V 14.5A/124A IPAK |
|
STP80N10F7STMicroelectronics |
MOSFET N-CH 100V 80A TO220 |
|
HUFA76413D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
UPA2751GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NIF9N05CLT3G-SYRochester Electronics |
2.6 A, 52 V, N-CHANNEL, LOGIC LE |
|
EPC2020EPC |
GANFET N-CH 60V 90A DIE |
|
IPZ60R099C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 22A TO247-4 |
|
STW69N65M5-4STMicroelectronics |
MOSFET N-CH 650V 58A TO247-4L |
|
TPH6R30ANL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 66A/45A 8SOP |
|
FCH041N65EF-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 76A TO247 |
|
NTMFS5832NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 20A/111A 5DFN |
|
TK31E60X,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO220 |