English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ CFD7 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 90mOhm @ 9.3A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 470µA |
| 栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1747 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 227W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-HDSOP-10-1 |
| 包/箱: | 10-PowerSOP Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPWR8503NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 150A 8DSOP |
|
BSC026NE2LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 24A/82A TDSON |
|
FDMC86116LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 3.3A/7.5A 8MLP |
|
DMNH6008SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 16.5A PWRDI5060 |
|
FQPF9P25Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 250V 6A TO220F-3 |
|
RQ6C050UNTRROHM Semiconductor |
MOSFET N-CH 20V 5A TSMT6 |
|
BSS138LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 200MA SOT23-3 |
|
IRFF131Rochester Electronics |
MOSFET N-CH 80V 8A TO205AF |
|
IXFP8N85XMWickmann / Littelfuse |
MOSFET N-CH 850V 8A TO220 |
|
BUK752R7-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A TO220AB |
|
DMN1004UFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 70A POWERDI3333 |
|
IPB025N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO263-7 |
|
TQM050NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 16A/104A PDFN56U |
